发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve power gain by a method wherein capacitance is formed in the form of direct connection against an earth inductance component and it is series-resonated. CONSTITUTION:A field effect transistor chip 3 and a chip capacitor 4 are mounted on the flange 2 in a package using the soldering material such as gold, tin and the like. The source bonding pad 5 of the transistor chip 3 and the chip capacitor 4 are connected by the bonding wire 6 of gold and the like. In this case, when the earth inductance, to be formed on the bonding wire 6, is set at L, the capacitance of the chip capacitor 4 is set at C and operating frequency is set at (f), the bonding wire 6 and the chip capacitor 4 are set in such a manner that the relational expression of f=1/(2pisq. rt. LC) will be formed. An effective earth inductance component is brought into an almost zero state, and this contributes greatly to the improvement of power gain in a high frequency operation.
申请公布号 JPH0697203(A) 申请公布日期 1994.04.08
申请号 JP19920136441 申请日期 1992.05.28
申请人 NEC CORP 发明人 SHIOZAKI OSAMU
分类号 H01L21/60;H01L21/338;H01L29/812 主分类号 H01L21/60
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