| 摘要 |
<p>PURPOSE:To fabricate a semiconductor device having lowermost wiring layer composed of a high melting point metal film in which moisture resistance is enhanced without sacrifice of patterning accuracy in various fabrication steps. CONSTITUTION:A first wiring layer is made of a high melting point metal film and the end face 4F on the dicing line 2 side, where 8 semiconductor substrate 1 underlying the first wiring layer and contacting directly with an underlying dielectric film 4 is exposed, is covered directly with a high melting point film 9 extending from the dicing line 2 onto the underlying dielectric film 4. An uppermost passivation layer 8 covering an element region 3 surrounded by the dicing line 2 comes into direct contact with a high melting point metal film 9S on the dicing line 2 and terminates on a same plane as the dicing line 2 crossing substantially perpendicularly with the semiconductor substrate 1.</p> |
