Method for forming doped regions within a semiconductor substrate

摘要

A method for forming a first doped region (24) and a second doped region (26) within a substrate (12). A masking layer (14) overlies the substrate (12). A first region (20) of the masking layer (14) is etched to form a first plurality of openings. A second region (22) of the masking layer (14) is etched to form a single opening or a second plurality of openings different in geometry from the first plurality of openings. A single ion implant step or an equivalent doping step is used to dope exposed portions of the substrate (12). The geometric differences in the masking layer (14) between region (20) and region (22) results in the formation of the first and second doped regions (24 and 26) wherein the first and second doped regions (24 and 26) vary in doping uniformity, doping concentration, and doping junction depth.