| 摘要 |
PURPOSE:To obtain an electric conductivity which is suitable for use as an acoustoelectric effect device by doping a single crystal made mainly of ZnO with a specified amount of a trivalent metal such as Al. CONSTITUTION:A growth container 10 is filled with a ZnO sintered body 1, where a baffle plate 3 is installed to partition its inside into a material filled zone 14 and a crystal growth zone 16. ZnO seed crystals 7 are hang on an Pt frame 5, and the frame 5 is arranged in the crystal growth zone 16. The growth container 10 is injected with a solution made of 3 mol/l KOH and 1.5mol/l LiOH and with H2O2. The growth container 10 is installed in an autoclave, which is then injected with distilled water and sealed with water. After heating with the autoclave installed in an electric furnace, the ZnO single crystals are dipped in an Al(OH)3 solution and subjected to diffusion treatment at high temperature in an atmospheric air to dope them with Al. The electric conductivities and Al doping amounts of obtained ZnO single crystals are 10<-3>-10<-6>l/OMEGA.cm and 15-120ppm, respectively. |
