| 摘要 |
<p>PURPOSE:To increase the capacity of the auxiliary capacitive elements formed on the active matrix substrate. CONSTITUTION:This active matrix substrate has pixel electrodes arranged in a matrix form, thin film transistors(TFTs) connected to these pixel electrodes and the auxiliary capacitor for holding charges via these TFTs. the auxiliary capacitor 1 are provided within non-plane regions having plural projecting parts or recessed parts formed on the main surface of the substrate. More specifically the auxiliary capacitor 1 are provided in >=2 pieces of trench recessed parts or trench cells 2 formed on the main surface of the active matrix substrate. The auxiliary capacitor 1 are constituted of first electrode layers 4 formed along the inside walls of the respective trench cells 2, dielectric films formed on the first electrode layers 4 and second electrode layers 6 formed on these dielectric film. The trench cells 2 provide the assemblages finely segmented by partition walls 3.</p> |
