发明名称 SEMICONDUCTOR LASER ELEMENT AND FABRICATION THEREOF
摘要 PURPOSE:To permit efficient capturing of oscillation light by providing a current block layer closely to an optical guide layer in a window region, making the current block layer transparent for the oscillation light, thereby minimizing leakage current entering into the window region. CONSTITUTION:Oscillation light from a quantum well active layer 3 is guided in a p-buried guide layer 5 provided closely to a resonator surface 40 in a window region and then emitted from the right and left resonators 40. Since the p-buried guide layer 5 is transparent for the oscillation light and the oscillation light is not absorbed by the resonator surface 40, thermal fracture does not take place and stabilized operation is ensured upto high output. Furthermore, an n-current block layer 7 having different conductivity type is provided closely on the optical guide layer 5 in the window region in order to suppress leakage current entering into the window region effectively. The n-current block layer 7 does not absorb the oscillation light and thereby does not deteriorate the oscillation characteristics of laser element.
申请公布号 JPH0677607(A) 申请公布日期 1994.03.18
申请号 JP19920250728 申请日期 1992.08.26
申请人 NEC CORP 发明人 TSUNEKANE MASAKI
分类号 G02B6/122;G02B6/12;H01S5/00;H01S5/042;(IPC1-7):H01S3/18 主分类号 G02B6/122
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