| 摘要 |
<p>PURPOSE:To achieve that a TFT which can reduce an OFF current is obtained by a simple process. CONSTITUTION:Intermediately doped regions 6 are formed between a channel region 5 which is composed of an intrinsic amorphous silicon film and heavily doped regions 7a, 7b which are formed under a source electrode 9a and a drain electrode 9b. Since the resistance of the intermediately doped regions 6 is high as compared with that of the heavily doped regions 7a, 7b, the OFF current of a TFT can be reduced. In addition, the channel region 5, the intermediately doped regions 6 and the heavily doped regions 7a, 7b can be formed in such a way that a semiconductor layer composed of amorphous silicon is doped with impurities, thereby simplifying the TFT manufacturing process.</p> |
