发明名称 |
Masking material for applications in plasma etching |
摘要 |
Materials of the lead perovskite family PbZrxTi1-xO3 have been discovered to be excellent masking materials in the etching of silicon and silicon-containing materials with chlorine and fluorine -based plasmas. Generally, materials of the lead perovskite family are suitable masking materials for any material that is etched in chlorine and fluorine -based plasmas.
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申请公布号 |
US5292402(A) |
申请公布日期 |
1994.03.08 |
申请号 |
US19920910951 |
申请日期 |
1992.07.09 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ABT, NORMAN E.;ARONOWITZ, SHELDON |
分类号 |
H01L21/308;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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