发明名称 Masking material for applications in plasma etching
摘要 Materials of the lead perovskite family PbZrxTi1-xO3 have been discovered to be excellent masking materials in the etching of silicon and silicon-containing materials with chlorine and fluorine -based plasmas. Generally, materials of the lead perovskite family are suitable masking materials for any material that is etched in chlorine and fluorine -based plasmas.
申请公布号 US5292402(A) 申请公布日期 1994.03.08
申请号 US19920910951 申请日期 1992.07.09
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 ABT, NORMAN E.;ARONOWITZ, SHELDON
分类号 H01L21/308;H01L21/311;(IPC1-7):H01L21/00 主分类号 H01L21/308
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