| 摘要 |
PURPOSE: To reduce a programming voltage to be impressed on a gate and/or to reduce a time necessary for programming a device. CONSTITUTION: A memory device 10 of MOS type EPROM is provided with a gate 12, a floating gate 20, a read-out channel 40, a read-out source 42, read- out drain 44, a channel for programming 30, a source for programming 32, and a drain for programming 34. While being programmed, a voltage is impressed across the read-out source and the read-out drain. As a result, since the voltage induced on the floating gate 20 increases, this makes it possible to reduce the programming voltage to be impressed on the gate 12. |
