BURIED CHANNEL-TYPE P-CHANNEL MISFET,申请号JP19920061629-传众专利搜索

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发明名称	BURIED CHANNEL-TYPE P-CHANNEL MISFET
摘要
申请公布号	JPH0645595(A)	申请公布日期	1994.02.18
申请号	JP19920061629	申请日期	1992.03.18
申请人	NEC CORP	发明人	ABIKO HITOSHI
分类号	H01L29/78;(IPC1-7):H01L29/784	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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