| 摘要 |
PURPOSE:To realize a semiconductor integrated circuit device wherein manufacture process is more simplified, and which has lower production cost and high reliability equal to conventional technologies, by making a structure wherein a second protecting film is formed only on the side wall of an opening for bonding, which is formed by a first protecting film having a two-layer structure. CONSTITUTION:A semiconductor is provided with a first protecting film having laminated layer structure consisting of thin films 4, 5 of more than two types which are formed on a wiring metal 23; an opening 8 formed by the first protecting films 4, 5 on a bonding pad 3 of the wiring metal 23; and a second protecting film 7 formed only on the side wall of the opening 8 of the first protecting films 4, 5. For example, the first protecting film having the opening 8 is formed by stacking and a PSG film and a silicon nitride film 5 by plasma CVD method, and by patterning them. Then, the silicon nitride film 7 is deposited on the whole area by plasma CVD method. After that, anisotropic RIE is conducted, and the silicon nitride film 7 remains only on the side walls of the opening 8. |
