| 摘要 |
PURPOSE:To provide a PdGe alloy electrode wherein its resistance is low and its film quality is high regarding the manufacturing method of a semiconductor device provided with an HET or an RFET having a structure wherein a base electrode composed of a PdGe alloy is connected to an InGaAs base layer. CONSTITUTION:The manufacturing method of an electrode coming into ohmic contact with a compound semiconductor layer 4 containing InGaAs is constituted so as to include the following: a process wherein Pd films 12a and Ge films 13a are laminated alternately and repeatedly a plurality of times on a compound semiconductor layer 2; and a process wherein the Pd films 12a and the Ge films 13a are allayed by an annealing operation, the compound semiconductor layer 4 and an alloying film 14 are alloyed and a low-resistance layer 16 is formed at their interface. |
