Field-effect transistor and method for fabricating the same.

摘要

There is disclosed a process for fabricating a field-effect transistor comprising: a first step of implanting ions in a semiconductor substrate (1) to form an active layer (3); a second step of forming a dummy gate on the semiconductor substrate (1), and implanting a dopant in the semiconductor substrate (1) with the dummy gate as a mask to form a first doped layer (6); a third step of reducing a conifiguration of the dummy gate, and implanting a dopant in the semiconductor substrate to form a second doped layer (7); a fourth step of forming an insulating film (8) using said reduced dummy gate; and a fifth step of removing a part of the insulating film on the first doped layer (6), forming an ohmic electrode (10; 11) in the region with the insulating film (8) removed, lifting off the insulating film using said reduced dummy gate, and forming a gate electrode (12) in the lifted-off region. <IMAGE>