| 摘要 |
PURPOSE:To easily manufacture a quantum element with dimensions enough for obtaining quantum effect by embedding a conductor around a plate-shaped conductor and an insulation film. CONSTITUTION:A resist 41 with a thin shape which is 30nm wide is formed on a silicon substrate 40. Then, a part which is not covered with resist of the silicon substrate 40 is etched nearly vertically, thus forming a plate-shaped silicon 42. Then, the resist 41 is eliminated. Then, thermal oxidation is performed and then a thermal oxidation film 43 which is 2nm thick is formed around the plate-shaped silicon 42. Finally, a single-crystal silicon 44 is formed before flattening. In this manner, single-crystal silicon- 2nm tunnel oxide film - 30nm thick silicon (substrate)- 2nm tunnel oxide film - single-crystal structure are formed, thus manufacturing a quantum element with dimensions enough for obtaining a resonance tunnel effect. |
