DRAM CELL AND FABRICATING METHOD THEREOF

摘要

The DRAM cell is manufactured by forming on a semiconductor substrate by etching, removing the resist and forming field oxide layer on part of the substrate. A gate oxide layer are sequentially formed and a gate electrode is formed on the side walls of the projection by etching over the conductive layer by anisotropic etching. A source electrode is formed by doping with impurity of opposite conductivity type to the substrate. An intermediate insulating layer is formed on all surfaces of the substrate, then coating with a photoresist on the projection. The photoresist and insulating layer are etched out to expose to source electrode of the projection. A conductive layer is formed an all its surfaces of the substrate including the first charge storage electrode, then anisotropically etching to form a second charge storage electrode on the insulating layer of the side walls of the projection.