| 摘要 |
PURPOSE:To make it possible for a defective portion in an element region to be easily corrected by eliminating the defective portion from a semiconductor integrated circuit element with the use of anisotropic etching and, thereafter, filling the eliminated area with a good element having the same (111) side planes as those of the eliminated portion by the same etching. CONSTITUTION:A trench having (111) side planes and a through hole 2 are formed in an area 4 where an element is to be formed on a semiconductor substrate 1 with the use of anisotropic etching. An element 3 to be buried that has the (111) side planes and is smaller than the trench and the hole 2 is formed by the same anisotropic etching. The buried element 3 is brought into alignment with the substrate 1 by means of one (111) side plane of the element together with a reference plane 6 at the bottom of the substrate. The gap between the substrate 1 and the element 3 is filled with a filler 5 such as overcoat glass, and is also bonded and made smooth at the same time. Thereby, the substrate 1 and the element 3 can be easily brought into alignment with each other. |
