Vorrichtung zur Absorption infraroter Strahlung

摘要

The invention concerns an IR-absorption device which can be manufactured using CMOS materials and techniques without any limitations. The absorber structure proposed consists of a lower layer (1) with a low transmission coefficient, a middle layer (2) with a high absorption coefficient and an upper, absorbing, element (3) with a low reflection coefficient for the radiation which is to be absorbed, which is incident from above. The upper element may consist of recesses in the middle layer, the walls of the recesses being coated with metal. The absorber structure is suitable for use in manufacturing inexpensive integrated thermal IR detectors.