发明名称 |
Focused ion beam implantation apparatus. |
摘要 |
<p>A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, an d a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target. <IMAGE></p> |
申请公布号 |
EP0579524(A1) |
申请公布日期 |
1994.01.19 |
申请号 |
EP19930401682 |
申请日期 |
1993.06.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TAKAO;IIYAMA, MICHITOMO |
分类号 |
H01J37/147;H01J37/20;H01J37/30;H01J37/305;H01J37/317;(IPC1-7):H01J37/317 |
主分类号 |
H01J37/147 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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