发明名称 Focused ion beam implantation apparatus.
摘要 <p>A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, an d a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target. &lt;IMAGE&gt;</p>
申请公布号 EP0579524(A1) 申请公布日期 1994.01.19
申请号 EP19930401682 申请日期 1993.06.29
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NAKAMURA, TAKAO;IIYAMA, MICHITOMO
分类号 H01J37/147;H01J37/20;H01J37/30;H01J37/305;H01J37/317;(IPC1-7):H01J37/317 主分类号 H01J37/147
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