Method of making a semiconductor memory device

摘要

A semiconductor memory device includes a cell array region and a peripheral circuit region, wherein a channel is formed to surround the cell array region, on a border region between the cell array region and peripheral circuit region. Also, a method for the semiconductor memory device is provided. Therefore, the conventional problem of degraded reliability of the conductive layer due to the step between the cell array region and peripheral circuit region, can be prevented. At the same time, the surface planarization of the peripheral circuit region can be attained.