发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To achieve the high speed of a readout operation by eliminating a need for a random read operation in the changeover point of a page. CONSTITUTION:The title memory device is provided with a plurality of latch means 2A, 2B constituted in the following manner: when data is read out from a memory beans 1, data in a prescribed unit is latched by a random read operation and read out to a data output line; and when data in a plurality of prescribed units are read out continuously, the other latches the data in the next prescribed unit by the random read operation while one reads out the data in the latched previous prescribed unit to the data output line.</p>
申请公布号 JPH065085(A) 申请公布日期 1994.01.14
申请号 JP19920157831 申请日期 1992.06.17
申请人 TOSHIBA CORP 发明人 TANAKA YOSHIYUKI;TANAKA TOMOHARU;NAKAMURA HIROSHI;OHIRA HIDEKO;OKAMOTO YUTAKA
分类号 G11C17/00;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C17/00
代理机构 代理人
主权项
地址