Feldeffekttransistor in einem halbisolierenden Substrat hergestellt.

摘要

Disclosed is a semiconductor device having a field effect transistor (FET) formed in a semi-insulative substrate (22). A positive bias voltage equal to or higher than the bias voltage applied to the drain electrode (27) of the FET is applied to a back surface electrode (29) formed on the back surface of the substrate (22), with the result that the electrons generated within the semi-insulative substrate (22) are pulled into the back surface electrode (29) so as to prevent said electrons from flowing into the drain region (24) and, thus, to prevent modulation of the drain current.