Non-volatile semiconductor memory, e.g. EPROM or EEPROM - has switch elements controlled by selection device each connecting external contact to memory cell array

摘要

The semiconductor memory has an external contact (4). A number of switch elements (QB0, QB1...QBn) each connect the external contact to a memory cell array (1a, 1b...1n). A bit row selection device (5) selects and turns on one of the switch elements. The selection device forms a current path, which runs from a determined memory cell (Qi) in the memory cell array of the same bit row to the external contact. When a voltage is applied to the external contact a current passes through the determined memory cell. ADVANTAGE - Enables direct measurement of electrical properties of memory cells and improvement of product yield and precision of product failure analysis.