发明名称 ESD protection using npn bipolar transistor
摘要 A circuit for protecting an IC against electrostatic discharge includes a npn transistor having its collector connected to a first I/O pad and its emitter connected to VSS. A zener diode has its cathode connected to the first I/O pad, its anode connected both to the base of the npn transistor and to a first resistor. The other end of the resistor is connected to VSS.
申请公布号 US5276582(A) 申请公布日期 1994.01.04
申请号 US19920928902 申请日期 1992.08.12
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 MERRILL, RICHARD B.;REYNOLDS, DAVID C.;FARRENKOPF, DOUG
分类号 H01L27/06;H01L21/8234;H01L27/02;H01L27/088;(IPC1-7):H02H9/04 主分类号 H01L27/06
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