| 摘要 |
In a process for the preparation of crystals belonging to centrosymmetry class 32 and having the chemical total formula ABO4, where A originates from the group Ga, Al and B originates from the group P, As, from heated solutions of salts of group A in an acid or an acid mixture from the group H3PO4, H2SO4 and HCl, an acid concentration in the range from 3 to 8 mol/l is chosen, the growth temperature lying in the range from 100 to 135 degree C. In order to reduce the OH content, the crystal growth is kept below 400 micrometers per day, preferably below 250 micrometers. |
