| 发明名称 |
Programmable semiconductor antifuse structure and method of fabricating |
| 摘要 |
A programmable semiconductor antifuse structure and method of fabricating are provided which allow for miniaturization of components to an area of less than one micron. The cell exhibits a high pre-programmed resistance of more than 1x107 ohms and has an extremely low programmed cell resistance of around 50 ohms.
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| 申请公布号 |
US5272666(A) |
申请公布日期 |
1993.12.21 |
| 申请号 |
US19910781056 |
申请日期 |
1991.10.18 |
| 申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
TSANG, WAI M.;HU, DANIEL C.;KHONG, DONG T. |
| 分类号 |
H01L21/768;H01L29/861;(IPC1-7):H01L29/10;H01L21/283 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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