| 摘要 |
<p>PURPOSE:To perform a high-accuracy positioning operation by a method wherein the title apparatus is provided with a length measuring means, for position measurement, using an adjustment means which makes the measuring point of a laser for length measurement coincide with the height of the surface of a substrate to be treated and an error is corrected on the basis of a measured value obtained by using a measurement means which measures the inclination amount of the substrate to be treated. CONSTITUTION:The height at the central position of the surface of a wafer 5 is measured by means of an electric micrometer or the like. An auxiliary jig whose surface is parallel to the X-Y plane and whose height is the same as the measured value is constituted separately on the side of a laser interferometer 7. A light-quantity meter is installed between the auxiliary jig and a length-measuring mirror 6 in such a way that the center of the light beam of a length measuring laser 8 passes just above the surface of the auxiliary jig the height of the laser interferometer 7 is adjusted in such a way that the surface of the profile becomes a position in which the total light quantity of a laser light beam in a measuring position becomes a half value. In addition, the inclination amount of the wafer 5 is measured. A correction factor is found; it is added to the detection value of the laser interferometer 7; a positioning error is reduced. Thereby, the high-accuracy positioning operation of the title apparatus can be performed.</p> |
