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发明名称
HIGH WITHSTAND VOLTAGE MOS TRANSISTOR
摘要
申请公布号
JPH05326949(A)
申请公布日期
1993.12.10
申请号
JP19920130979
申请日期
1992.05.22
申请人
TOSHIBA CORP;TOSHIBA MICRO ELECTRON KK
发明人
TAKADA OSAMU
分类号
H01L29/78;(IPC1-7):H01L29/784
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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