发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a semiconductor device having high characteristics at low cost wherein the chip area is to be cut down by removing respective patterns of inductor and capacitor from an integrated circuit substrate having high-frequency integrated circuit. CONSTITUTION:Respective patterns of an inductor 2 and a capacitor 3 are provided on a laminated ceramic substrate 9 as a mother body of a package containing a high-frequency integrated circuit and then these patterns are removed from an integrated circuit substrate 8 whereon the high-frequency integrated circuit is formed so as to cut down the chip area.
申请公布号 JPH05326739(A) 申请公布日期 1993.12.10
申请号 JP19920123442 申请日期 1992.05.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 KADOWAKI YOSHINOBU
分类号 H01L23/12;H01L23/13;H01P1/00;H01P3/08;H03F3/60 主分类号 H01L23/12
代理机构 代理人
主权项
地址