| 摘要 |
PURPOSE:To make it possible to effectively utilize hot carriers, and to obtain an element possessing superior characteristics by causing a p-type semiconductor and an n-type semiconductor to be a base layer and an emitter layer, respectively, and by specifying a doping level of the emitter layer. CONSTITUTION:A semiconductor device is constituted of a p-type GaAs substrate 1 having a high concentration of impurity, a p-type GaAs buffer layer 2 having a high concentration of impurity, a p-type Al GaAs carrier block layer 3 having a high concentration of impurity, a p-type GaAs base layer 4, an n-type GaAs emitter layer 5, an n-type AlGaAs window layer 6, an n-type GaAs contact layer 7 having a high concentration of impurity, a lower electrode 8, an upper electrode 9 and an antireflection film 10. Here, a concentration of carriers of the emitter layer 5 is set to 1X10<16>-5X10<19>cm<-3>, and the thickness of a film of the emitter layer is set to 0.01-0.2mum. Thus, it is possible to utilize optically pumped carriers effectively and to achieve a high efficiency by reducing the thickness of the emitter layer 5. |
