| 摘要 |
The method for mfg. a thin film transistor is characterized by (a) forming an insulating film (3) of 500-2000 on the substrate (1) by the CVD method, (b) forming a polycrystalline silicon film of 800-1500 on the film (3), and a gate electrode (5) by the photolithography method, (c) forming a gate oxide film (7) of 200- 800 on the whole surface at a high temp., (d) forming an amorphous silicon layer (9) of 100-700 on the film (7) at 450- 560 deg.C by the LPCVD method, (e) ion-implanting a nitrogen and BF2 into the layer (9), (f) forming a photoresist mask, and forming a source/drain region (11,13) by ion-implanting BF2 into the fixed part of the layer (9), and removing the mask pattern.
|
