| 摘要 |
PURPOSE:To provide a light-emitting diode array which can reduce lattice distortion and thermal stress of a III-V group chemical compound semiconductor formed on a silicon semiconductor substrate, and can extend remarkably the light emitting duration of life, and to provide the manufacture 4 the light- emitting diode array. CONSTITUTION:III-V group chemical compound semiconductors composed of GaAsP are laminated by optional epitaxial growth method on a silicon semiconductor substrate of a region surrounded by an insulating film 3 bonded on the silicon semiconductor substrate. As a result, PN junction is formed, and a conductive film 6 serving as an electrode is bonded on the main surface of the III-V group chemical compound semiconductors. The light-emitting area of a single unit light-emitting diode 8 with rectangular shape consisting of PN junction is set to less than 400mum<2>. One side in longer direction of a light- emitting section with rectangular shape is set to less than 50mum<2> thereby light- emitting life can be extended remarkably. At the same time, it is possible to form a relatively large light-emitting diode by integrating single unit light- emitting diode. |
