| 摘要 |
PURPOSE:To reduce an alignment error even when a photosensitive substrate is thermally deformed due to a beam of exposure light. CONSTITUTION:Coordinates in a coordinate system on a wafer stage in a prescribed shooting region on a wafer W are actually measured via an alignment optical system 24. A transformation parameter from coordinates on the wafer to coordinates on the wafer stage 17 is found. The accumulated energy of a beam of exposure light to the wafer W is found by means of an irradiation- amount monitor 19, a reflectivity monitor 23 and the like; the temperature distribution of the wafer W is computed; the thermal displacement in each shooting region of the wafer W is computer. Each shooting region of the wafer is aligned on the basis of the coordinates which have been obtained by adding the offset of the portion of the thermal displacement to the coordinates which are found means of the transformation parameter. Then, an exposure operation is performed. |
