| 摘要 |
forming an insulating layer having a contact hole, forming 1st metal layer and 1st barrier metal layer each of a predetermined thickness; sufficiently coating and reflowing SOG film; etch-backing SOG film, 1st metal layer and 1st barrier metal layer at the same etching rate to a thickness; and depositing 2nd barrier metal layer and 2nd metal layer in order on the exposed SOG film and 1st barrier metal layer. The 1st, 2nd metal layers are aluminum or tungsten silicide and the 1st, 2nd barrier metal layers are Ti, Ta, TiW or TiN.
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