| 发明名称 |
High density SRAM circuit with single-ended memory cells |
| 摘要 |
A high density, static random access memory (SRAM) circuit with single-ended memory cells employs a plurality of (4T-2R) or (6T) type SRAM cells and a regenerative sense amplifier. Each of the SRAM cells employs a single bit-line (BL) and two word lines.
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| 申请公布号 |
US5265047(A) |
申请公布日期 |
1993.11.23 |
| 申请号 |
US19920848551 |
申请日期 |
1992.03.09 |
| 申请人 |
MONOLITHIC SYSTEM TECHNOLOGY |
发明人 |
LEUNG, WINGYU;HSU, FU-CHIEH |
| 分类号 |
G11C7/06;G11C11/412;G11C11/419;(IPC1-7):G11C11/00;G11C17/00 |
主分类号 |
G11C7/06 |
| 代理机构 |
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