| 摘要 |
PURPOSE:To realize a semiconductor device in which optoelectric conversion efficiency is enhanced by irradiating with light the border between a silicon semiconductor transition region and a silicon carbide semiconductor transition region and the vicinity thereof. CONSTITUTION:A P-type non-single crystal layer 36 is formed on an electrode formed on a glass through glow discharge by mixing silane, methane, and diborane so that carbon is contained by 5-30 atomic % and an I-type non-single crystal layer 37 is formed through glow discharge by mixing silane and methane so that carbon is added by 1-5%. Silane and phosphine are then mixed in order to form an N-type non-single crystal semiconductor layer 38 and two junctions are provided thereto and an aluminum electrode is finally provided to constitute a solar cell. Since bonds of Si and C, which may become unpaied bond, are bonded with hydrogen or halogen elements to be neutralized at a junction of non-single crystal semiconductor having different Eg, occurrence of interface state density due to mismatch of lattice can be suppressed resulting in enhancement of optoelectric conversion efficiency. |
