Surface emitting semiconductor laser

摘要

A surface emitting semiconductor laser includes a body of a semiconductor material having a pair of opposed surfaces and a plurality of active regions stacked one on the other between the surfaces. Each of the active regions includes a p-type conductivity layer, an n-type conductivity layer and an active layer therebetween. The active layer can either be intrinsic or a quantum well. The p-type and n-type layers are doped to provide a tunneling junction between the layers of adjacent active regions. The active layers of the active regions are spaced apart a multiple of one-half a wavelength to provide distributed feedback. Contacts are on the surfaces of the body with one of the contacts having an opening therethrough through which a generated light beam can emerge.