| 摘要 |
PURPOSE:To eliminate the deviation of a processing position occurring in the factor for drift and to detect the processing position with high accuracy by using a mark for positioning and energy beam to form dummy marks on a work and detecting a relative disposition error. CONSTITUTION:A wafer 2 is subjected to global alignment by utilizing micro scopes 11, 15, 13 in an X direction, Y direction an theta direction which are align ment mark detectors and thereafter the positions of the alignment marks 30X, 30Y are detected and the X coordinate of 30X and Y coordinate of 30Y are determined. The dummy marks are formed by a laser beam for processing on a wafer street 26 of the wafer 2 and the positions of the dummy marks 31X, 31Y are detected by the X-direction, Y-direction microscopes 11, 15. The X coordinate and Y coordinate thereof are determined and the distances dX, dY thereof are calculated by a control device 40. The relative error occurring in the factor for drift is calculated. The extent of the movement of a stage 1 is corrected by as much as the error. |
