| 摘要 |
<p>PURPOSE:To reduce a total area to be occupied by a variable capacity diode and an inductance to be formed on a semiconductor substrate. CONSTITUTION:When a variable capacity diode is a P-N junction, an inductance is formed of a first diffused layer 1, and a variable capacity diode is formed of a first inductance and a second diffused layer 2. When the diode has a MIS structure, an inductance is formed of a first metal 3, and the variable capacity diode is formed of the metal 3 and the layer 1.</p> |
