FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF,申请号JP19920118383-传众专利搜索

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发明名称	FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF
摘要
申请公布号	JPH05291301(A)	申请公布日期	1993.11.05
申请号	JP19920118383	申请日期	1992.04.10
申请人	MITSUBISHI ELECTRIC CORP	发明人	FUJII TAKAYUKI
分类号	H01L29/812;H01L21/338;(IPC1-7):H01L21/338	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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