MONOLITHICALLY INTEGRATABLE TEMPERATURE SENSOR FOR POWER SEMICONDUCTOR DEVICES AND METHOD OF MAKING THE SAME

摘要

The invention relates to a temperature sensor (TSENS) which, together with a vertical power semiconductor structure (LH), is monolithically integrated in a semiconductor body (H), the power semiconductor structure consisting of a multiplicity of power cells (LZ1, LZ2...) and the temperature sensor being formed from two sensor cells (SZ1, SZ2) which can be fabricated at the same time as the power cells. The main advantage of the invention is the ability to fabricate, in a process-compatible and thus cost-effective manner, a highly sensitive temperature sensor without any additional steps together with a vertical power semiconductor structure. ……