| 摘要 |
PURPOSE:To obtain a method for forming a transformed layer highly resistant to etching on the resist surface with respect to manufacture of a semiconductor device. CONSTITUTION:A method comprises steps of forming a resist mask 3 having an opening 4 on a semiconductor substrate 1, exposing the resist mask 3 to plasma of mixture gas containing hydrogen bromide and oxygen and at the same time applying ultraviolet rays to the resist mask 3 and forming a transformed layer 3 on the surface of the resist mask 3. A flow capacity of oxygen in the mixture gas is made to be 10% or less (zero is not included) of the flow capacity sum of hydrogen bromide and oxygen. Alternatively a resist mask having an opening is formed on a semiconductor substrate 1, the resist mask is exposed to plasma of mixture gas containing hydrogen bromide, helium and oxygen to form a transformed layer on the surface of the resist mask. |
