| 摘要 |
PURPOSE:To obtain the manufacturing method for a high quality I-III-VI compound semiconductor thin film having improved crystallizability of film without generation of reaction between a substrate and selenium or sulfur. CONSTITUTION:Cu and In in mol ratio of one to one are laminated on a Ti substrate by an electrodeposition method in about 1mum in film thickness, they are put in a reactor, and after heating them to 300 deg.C at the speed of 5 deg.C/min. while N2+H2 mixed gas is being introduced, they are maintained at the above- mentioned temperature for thirty minutes, Se gas is newly introduced, and they are maintained in that state for another two hours. The introduction of Se gas is stopped, and after they have been maintained for one hour at the above-mentioned temperature, temperature is raised to 500 deg.C at the speed of 5 deg.C/min., and after they have been maintained at that temperature for one hour, they are cooled down and a CuInSe2 single phase film is obtained. |
