| 摘要 |
PURPOSE:To form a high quality dielectric layer efficiently in short time, by sequentially laminating first layer of Al2O3, second layer of glass containing specific amount of SiO2 and third layer of Al2O3 on an electrode. CONSTITUTION:A plurality of X electrodes 2 and Y electrodes 12 of Cr-Cu are formed on each surface of glass substrates 1, 11. Preferably 3,000-10,000Angstrom depth of first layers 3, 13 of Al2O3 are formed through vacuum deposition on the electrode of said substrate, then second layers 4, 14 of high silicate glass containing at least 80% of SiO2 are coated with the depth of 2-10mum, while furthermore third layers 5, 15 composed of same Al2O3 with that of the first layer are coated with the depth of 3,000-10,000Angstrom . Moreover surface layers 6, 16 of MgO having excellent discharge characteristic are formed through vacuum deposition or spattering. Consequently high quality dielectric layer can be formed efficiently in short time. |
