摘要 |
The storage system uses a magnetoresistive element for reading and information from a magnetic material. The element is formed with a substrate (50), an anti-ferromagnetic film (32), a ferromagnetic film (11), non magnetic film (20), soft magnetic film (12), a further nonmagnetic film (20), a ferromagnetic film (11) and a final anti-ferromagnetic film (31) The anti-ferromagnetic films are of nickel oxide (31,32). The ferromagnetic film (11) is of either a NiFeCo alloy or a CoNiFe alloy. The soft magnetic film is of NiFe or NiFeCo. ADVANTAGE - Provides high recording density.
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申请人 |
HITACHI, LTD., TOKIO/TOKYO, JP |
发明人 |
HOSHIYA, HIROYUKI, HITACHI, JP;MITSUOKA, KATSUYA, HITACHI, JP;SANO, MASAAKI, HITACHI, JP;ARAI, REIKO, MITO, JP;SOEYA, SUSUMU, HITACHIOTA, JP;FUKUI, HIROSHI, HITACHI, JP;FUYAMA, MORIAKI, HITACHI, JP;SATO, FUMIO, HITACHI, JP |