发明名称 |
Electrical erasable and programmable read-only memory and manufacturing method therefor |
摘要 |
A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.
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申请公布号 |
US5252847(A) |
申请公布日期 |
1993.10.12 |
申请号 |
US19880241887 |
申请日期 |
1988.09.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ARIMA, EIICHI;NISHIMOTO, AKIRA;JINTATE, SHINICHI;SUDO, KAZUO;OKU, KAZUTOSHI |
分类号 |
H01L51/05;H01L21/3205;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L29/68;H01L29/78 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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