| 摘要 |
PURPOSE:To enable a polysilicon thin film of large area to be formed at a low temperature through a small chamber by a method wherein the polysilicon thin film is formed through a laser ablation method using an amorphous silicon target. CONSTITUTION:A polysilicon thin film is formed at a low temperature making use of a hydrogen atom effect. That is, an a-Si:H3 is used as a laser ablation target. When the a-Si:H3 is ablated by excimer laser rays, generated hydrogen atoms promote the crystallization of silicon on the surface of the substrate 1. A laser ablation threshold value or energy is lessened, and an ablation region of large area can be obtained. Furthermore, laser rays are scanned in directions of X and Y, and a polysilicon thin film of large area can be obtained. |
