| 摘要 |
PURPOSE:To form a microscopic resist pattern only on a layer by a method wherein light is made to irradiate on a photoresist by setting focus on the minus side from the best focus, the photoresist is developed, the whole surface of the photoresist is hardened by projecting ultraviolet rays at an angle, and the photoresist is developed. CONSTITUTION:A semiconductor substrate 1 is coated with photoresist 2. Then, using a mask 5 having the prescribed pattern, a light-exposing operation is conducted by setting the focus at a point located this side of the best focus. Subsequently, the resist pattern 6A of contact hole is formed on the semiconductor substrate 1 by developing the photoresist. Then, by giving a fixed angle, i.e., far ultraviolet rays 7 are projected on the part of photoresist 2 excluding the part of the contact hole 6A, and a photo-setting layer 8 is formed on the surface of the above-mentioned part. Then, the whole surface is exposed by an exposure light 4, and the photoresist is developed. As a result, a microscopic resist pattern can be formed. |
