发明名称 |
Luminescent thin film silicon device. |
摘要 |
<p>The present invention relates to a luminescent device comprising, on a conducting substrate (1), an amorphous-silicon layer (2) doped so as to be conductive, at least one upper part (3) of which has been made porous by anodization and oxidized. The substrate can be a metal, a single-crystal silicon wafer doped and metallized on its rear face, a conductive polymer, a small glass plate coated with a transparent conductive layer on the side where the amorphous silicon is deposited, etc. <IMAGE></p> |
申请公布号 |
EP0562981(A1) |
申请公布日期 |
1993.09.29 |
申请号 |
EP19930420127 |
申请日期 |
1993.03.23 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) |
发明人 |
BUSTARRET, ETIENNE;LIGEON, MIREILLE;MULLER, FRITZ;BRUYERE, JEAN-CLAUDE |
分类号 |
H01L21/306;H01L33/00;H01L33/18;H01L33/34 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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