发明名称 Luminescent thin film silicon device.
摘要 <p>The present invention relates to a luminescent device comprising, on a conducting substrate (1), an amorphous-silicon layer (2) doped so as to be conductive, at least one upper part (3) of which has been made porous by anodization and oxidized. The substrate can be a metal, a single-crystal silicon wafer doped and metallized on its rear face, a conductive polymer, a small glass plate coated with a transparent conductive layer on the side where the amorphous silicon is deposited, etc. &lt;IMAGE&gt;</p>
申请公布号 EP0562981(A1) 申请公布日期 1993.09.29
申请号 EP19930420127 申请日期 1993.03.23
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) 发明人 BUSTARRET, ETIENNE;LIGEON, MIREILLE;MULLER, FRITZ;BRUYERE, JEAN-CLAUDE
分类号 H01L21/306;H01L33/00;H01L33/18;H01L33/34 主分类号 H01L21/306
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