| 摘要 |
<p>A zone of one conductivity type is formed in the top surface of a semiconductor or substrate of the other type followed by a layer of second type material. Over this a metallising layer, esp. made up of two separate films of different metals is applied with an intermediate semiconductor layer of first-type for transistor prodn. The base of the substrate is then esp. lapped or polished until the first zone is exposed. The first semiconductor film is of higher resistivity than the substrate and is esp a thin collector layer of low collector resistance.</p> |
