| 摘要 |
PURPOSE:To suppress deterioration of a gate insulating film by keeping the performance a thin film transistor favorable with regard to a semiconductor device equipped with a thin film transistor. CONSTITUTION:This device comprises a thin film transistor which uses two layers 10, 13 sandwiching an insulating film 11 as a channel region and is equipped with a gate electrode Gp1 formed at least under the semiconductor layers 10, 13 via an insulating film 9. |
